PART |
Description |
Maker |
MDI550-12A4 MID550-12A4 |
1200V IGBT module IGBT Modules Short Circuit SOA Capability Square RBSOA IGBT Modules: Boost Configurated IGBT Modules
|
IXYS[IXYS Corporation]
|
CM20AD05-12H CM20AD00-12H |
CIB Modules: 600V MITSUBISHI IGBT MODULES
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
CM50DY-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
CM75DU-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
CM150DU-12F |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
CM75E3U-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
CM300E3U-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
CM15TF-12H |
IGBT Modules: 600V MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
CM200DY-12H |
IGBT Modules: 600V HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
SGB04N60 SGU04N60 SGD04N60 SGP04N60 |
IGBTs & DuoPacks - 4A 600V TO 220AB IGBT IGBTs & DuoPacks - 4A 600V TO252AA SMD IGBT IGBTs & DuoPacks - 4A 600V TO263AB SMD IGBT Fast IGBT in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|